Get e-book Radiation Effects in Semiconductors (Devices, Circuits, and Systems)

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Introduction to radiation-resistant semiconductor devices and circuits. United States: N. Copy to clipboard. United States.

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In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.

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New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. The state of the art of such research is reviewed in this article. This paper focuses on total ionizing dose TID effects induced in multiple-gate field-effect transistors.

The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and silicon-on-insulator SOI complementary metal-oxide-semiconductor CMOS technologies. These innovating devices exhibit specific ionizing dose responses which strongly depend on their three-dimensional nature. The potential of micro and nano electromechanical systems M and NEMS has expanded due to advances in materials and fabrication processes.

Special Issue on Radiation Effects in Semiconductor Devices

A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide SiC , III—V materials, thin-film piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride h-BN , and molybdenum disulfide MoS 2. The miniaturization, functionality and low-power operation offered by these types of devices are attractive for many application areas including physical sciences, medical, space and military uses, where exposure to radiation is a reliability consideration.

Understanding the impact of radiation on these materials and devices is necessary for applications in radiation environments. Design of modern integrated circuits increasingly requires consideration of radiation effects, especially in space and other high-risk environments.

Radiation hardening - Wikipedia

With fabrication technologies scaling down both feature sizes and critical charge, a radiation strike in sub nm technologies may affect multiple, physically adjacent nodes. With increasing clock speeds, transient errors in the processing datapath also increase in risk.

Modeling single-event multiple-transients SEMT for pre-fabrication reliability characterization has become a more common design step, and this work adds to the state-of-the-art by providing a fast and physically-informed characterization flow that captures the effects of single-event multiple-node charge collection through experimentally observed transport mechanisms.

Beyond characterization, the study of SEMT vulnerabilities reveals the electronic design automation EDA step of standard logic cell placement as a design space for hardening against SEMT-induced errors. This work: 1 analyzes the vulnerability of benchmark circuits against SEMT errors, 2 evaluates the impact of logic on transient propagation, 3 explores EDA placement techniques, and 4 builds an automated design flow for relative placement of cells to mask transient errors, while maintaining compatibility with other radiation hardening techniques.